Extraction of SPICE BJT model parameters in BIPOLE3 using optimization methods
نویسندگان
چکیده
AbstructWe present a method for SPICE model parameter extraction for a bipolar transistor in the active and quasisaturation modes. It uses the capabilities of the BIPOLE3 [l] simulator to enhance the optimization procedure. Comparisons are made between the Gummel-Poon, the VBIC95, and the SGSThomson Microelectronics SPICE model results for IC (1 ). I R ( T A , ). 3(1( ). f r ( I c ) , and Ir(1i.c) characteristics.
منابع مشابه
Kharkov National University of Radioelectronics
The corrections of the methodology of power BJT and MOSFET transistor models parameter extraction taking into account the self heating effects are presented For BJT these corrections are included into VBIC model parameter extraction process. For MOSFET current generator connected to standard SPICE MOS model is proposed to take into account drain current growth with transistor temperature.
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ورودعنوان ژورنال:
- IEEE Trans. on CAD of Integrated Circuits and Systems
دوره 15 شماره
صفحات -
تاریخ انتشار 1996